NTE2593 Silicon NPN Transistor High Voltage Amp/Switch TO220 Full Pack Features: High Breakdown Voltage: V = 2100V Min (BR)CEO Low Output Capacitance Wide ASO Range Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V ..................................................... 2100V CBO CollectorEmitter Voltage, V .................................................... 2100V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous ................................................................ 10mA Peak ..................................................................... 30mA Collector Power Dissipation, P ...................................................... 2W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 2100V, I = 0 1 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1 A EBO EB C DC Current Gain h V = 5V, I = 500A 10 60 FE CE C Gain Bandwidth Product f V = 10V, I = 500A 6 MHz T CE C CollectorEmitter Saturation Voltage V I = 1mA, I = 200A 5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 200A 2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 2100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100A, R = 2100 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Output Capacitance C V = 100V, f = 1MHz 1.3 pF ob CB Rev. 615.402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated