NTE2668 Silicon NPN Transistor High Current Switching Features: Adoption of FBET, MBIT process Large Current Capacitance Low Collector-To-Emitter Saturation Voltage High Speed Switching High Allowable Power Dissipation Applications: DC-DC Converter Relay Drivers Lamp Drivers Motor Drivers Strobes Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CES Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A B Collector Power Dissipation, P C T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W A T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temprature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stgElectrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 - - 0.1 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 - - 0.1 A EBO EB C h DC Current Gain V = 2V, I = 500mA 200 - 560 FE CE C f Gain-Bandwidth Product V = 10V, I = 500mA - - MHz T CE C 330 Output Capacitance Cob V = 10V, f = 1MHz - - pF CB 28 Collector-to-Emitter Saturation Voltage V I = 3.5A, I = 175mA - mV 160 240 CE C B I = 2A , I = 40mA - mV 110 170 C B Base-to-Emitter Saturation Voltage V I = 2A , I = 40mA - V BE C B 0.83 1.2 Collector-to-Base Breakdown Voltage V I = 10A, I = 0 80 - - V CBO C E Collector-to-Emitter Breakdown Voltage V I = 100A, R = 80 - - V CES C BE Collector-to-Emitter Breakdown Voltage V I = 1mA, R = 50 - - V CEO C BE Emitter-to-Base Breakdown Voltage V I = 10A, I = 0 6 - - V EBO C C Turn-On Time t - 30 - ns Pulse Width = 20s, Duty Cycle 1%, on 20I = -20I = I = 2.5A, B1 B2 C Storage Time t - 420 - ns stg V = 25V CC Fall Time t - 25 - ns f .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) BC E .295 (7.5) .002(0.5) .090 (2.3)