NTE2673 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2673 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2673 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE2673
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP
Datasheet:	NTE2673 Datasheet (PDF)

Price (USD)

23: USD 3.333 ea
Line Total: USD 76.66

Availability : 0

Qty	Unit Price
23	$ 3.333
25	$ 2.525
100	$ 2.1625
250	$ 2.0125
500	$ 1.9
1000	$ 1.825
2500	$ 1.7625
5000	$ 1.725

NTE2673 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 2

Ship by Wed. 01 Oct to Fri. 03 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.03

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To220fp To220fp
Type Of Transistor Npn Npn
Collector-Emitter Voltage 50 V 50 V
Collector Current 3 A 3 A
Power Dissipation 25 W 25 W
Current Gain 60 To 320 60 To 320
Frequency 90 MHz 90 MHz

We are delighted to provide the NTE2673 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2673 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2673 (NPN) & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: Low Collector Emitter Saturation Voltage: V = 0.5V Typ (I /I = 2A/0.2A) CD(sat) C B Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Collector Power Dissipation (T = +25C, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Single pulse: Pulse Width = 10ms. 2 Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm or larger. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 50A 60 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 1mA 50 V (BR)CEO C EmitterBase Breakdown Voltage V I = 50A 5 V (BR)EBO E Collector Cutoff Current I V = 40V 1 A CBO CE Emitter Cutoff Current I V = 4V 1 A EBO EB CollectorEmitter Saturation Voltage V I = 2A, I = 200mA, Note 3 0.5 1.0 V CE(sat) C B DC Current Transfer Ratio h I = 500mA, V = 3V, Note 3 60 320 FE C CE Transition Frequency f I = -500mA, V = 5V, f = 30MHz, Note 3 90 MHz T E CE Output Capacitance C V = 10V, I = 0A, f = 1MHz 40 pF ob CB E test Note 3. Measured using pulse current..394 (10.0) .177 (4.5) .276 (7.0) .110 (2.8) .071 (1.8) .669 (17.0) .472 (12.0) BC E .532 (13.5) Min .100 (2.54) .102 (2.6)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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