NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P(H)IS Type Package Features: High Breakdown Voltage: V = 1500V Min CBO High Switching Speed Low Saturation Voltage Applications: Color TV Horizontal Deflection Output Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1500V CBO Collector Emitter Voltage, V ..................................................... 600V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous .................................................................. 10A Pulse ....................................................................... 20A Continuous Base Current, I .......................................................... 5A B Collector Power Dissipation (T = +25C), P ......................................... 50W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 6A, I = 1.5A 3.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 6A, I = 1.5A 1.4 V BE(sat) C B Collector Cutoff Current I V = 1500V, I = 0 1.0 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h I = 1A, V = 5V 10 30 FE C CE I = 6A, V = 5V 4 8 C CE Current Gain Bandwidth Product f I = 100mA, V = 10V 1.7 MHz T C CE Output Capacitance C I = 0, V = 10V, f = 1.0MHz 135 pF OB E CB test Storage Time t I = 6A, I = 1.5A, f = 11 s stg CP B1(end) H 15.75kHz Fall Time t 0.7 s f.217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) .177 (4.5) .720 (18.3) Min BC E .215 (5.47) .138 (3.5)