NTE2680 NTE

NTE2680 Silicon NPN Transistor Power, High Speed Switch w/Internal Damper Diode TO3P(H)IS Type Package Features: Collector Emitter Sustaining Voltage: V = 800V Min. CEO(SUS) High Switching Speed Built in Damper Diode Applications: Horizontal Deflection Output for Color TV Receiver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage (V = 0), V ........................................... 1500V BE CES CollectorEmitter Voltage, V ..................................................... 800V CEO EmitterBase Voltage, V .......................................................... 8V EBO Collector Current, I C Continuous ................................................................... 8A Peak ....................................................................... 15A Base Current, I B Continuous ................................................................... 4A Peak ........................................................................ 6A Collector Power Dissipation (T = +25C), P ......................................... 45W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 2.8C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, L = 25mH 800 V CEO(SUS) C B EmitterBase Breakdown Voltage V I = 300mA, I = 0 8 V (BR)EBO E C CollectorEmitter Saturation Voltage V I = 5A, I = 1.25A 3.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 1.25A 1.03 V BE(sat) C B Collector Cutoff Current I V = 1500V, 1.0 mA CES CE V = 0 BE T = +125C 2.0 mA CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 5V I = 500mA 7.0 FE CE C I = 5A 4.2 C Diode Forward Voltage V I = 5A 2.2 V ECF F Storage Time t I = 5A, I = 1A, I = 2.5A 3.75 s stg C B1 B2 Fall Time t 0.4 s f .217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) BE C .177 (4.5) .720 (18.3) Min .215 (5.47) .138 (3.5)