NTE2687 Silicon NPN Transistor Fast Switching for High Frequency Inverter TO220 Fully Pack Features: Collector Emitter Sustaining Voltage: V = 450V Min CEO(sus) Fast Switching Speed Low Saturation Voltage Applications: Switching Regulators High Frequency Inverters General Purpose Power Amplifiers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 600V CBO CollectorEmitter Voltage, V ..................................................... 450V CEO CollectorEmitter Voltage (V = 5V), V ........................................... 600V EB CEX EmitterBase Voltage, V .......................................................... 7V EBO Collector Current, I C Continuous ................................................................... 8A Peak ....................................................................... 16A Base Current, I B Continuous ................................................................... 4A Peak ........................................................................ 8A Total Power Dissipation (T = +25C), P ............................................. 45W C T Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toCase, R .................................... 2.77 C/W thJC Rev. 615Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 0.2A, I = 0A 450 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 4A, I = 0.8A 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4A, I = 0.8A 1.5 V BE(sat) C B Collector Cutoff Current I At rated voltage 100 A CBO I At rated voltage 100 A CEO Emitter Cutoff Current I At rated voltage 100 A EBO DC Current Gain h I = 4A, V = 5V 10 FE C CE I = 1mA, V = 5V 5 C CE Current Gain Bandwidth Product f I = 0.8A, V = 10V 20 MHz T C CE TurnOn Time t 0.5 s I = 4A, I = 0.8A, I = 1.6A, on C B1 B2 R = 37.5, V = 4V L BB2 TurnOff Time t 2.0 s off Fall Time t 0.2 s f .402 (10.2) Max .165 (4.2) .669 (17.0) Max .138 (3.5) Dia .032 (0.8) .543 (13.8) Min BC E .200 (5.08) .189 (4.8) Max