NTE280 (NPN) & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: High Power Dissipation: P = 100W C CollectorEmitter Breakdown Voltage: V = 140V (BR)CEO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A E Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 140 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10mA, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 60V, I = 0 100 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C DC Current Gain h V = 5V, I = 2A 40 140 FE CE C CollectorEmitter Saturation Voltage V I = 7A, I = 700mA 3.0 V CE(sat) C B BaseEmitter ON Voltage V V = 5V, I = 7A 2.5 V BE(on) CE C CurrentGain Bandwidth Product f V = 5V, I = 2A 5 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 220 pF cb CE E Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and NTE281 (PNP)..135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case