NTE284 (NPN) & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: Recommended for 100W HighFidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A E Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C j Storage Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Condition Min Typ Max Unit Collector Cutoff Current I V = 90V, I = 0 100 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C CollectorEmitter Breakdown Voltage V I = 0.1A, I = 0 180 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10mA, I = 0 5 V (BR)EBO E C DC Current Gain h V = 5V, I = 2A 70 140 V FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 3.0 V CE(sat) C B Base to Emitter Voltage V V = 5V, I = 10A 2.5 V BE CE C Current Gain Bandwidth Product f V = 5V, I = 2A 6 MH T CE C Z Output Capacitance C ob NTE284 V = 10V, I = 0, f = 1MH 300 pF CB E Z NTE285 450 pF Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and NTE285 (PNP)..135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case