NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: 1W Audio Power Amplifier Applications Switching Applications Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . 35V CBO CollectorEmitter Voltage, V 30V CEO EmitterBase Voltage, V 5V EBO Collector Current, I . 800mA C Emitter Current, I . 800mA E Collector Power Dissipation, P 600mW C Operating Junction Temperature, T . +150C J Storage Temperature Range, T 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 30 V (BR)CEO C B Collector Cutoff Current I V = 35V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 2V, I = 50mA, Note 2 120 240 FE (1) CE C h V = 2V, I = 500mA, Note 2 35 FE (2) CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 20mA, Note 2 0.8 V CE(sat) C B BaseEmitter Voltage V V = 2V, I = 500mA, Note 2 1.1 V BE CE C CurrentGain Bandwidth Product f V = 10V, I = 10mA 140 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 22 30 pF ob CB E Switching Time TurnOn t V = 10V, V = 3V, 50 ns on CC BB Duty Cycle 2% Storage t 400 ns stg Fall t 40 ns f Note 1. NTE289MP is a matched pair of NTE289 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%..135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max .122 (3.09) Max .200 (5.08) Max .255 (6.48) Max E C B .492 (12.5 Min .017 (0.45) Dia027 (0.68) Dia059 (1.5) .059 (1.5)