NTE306 Silicon NPN Transistor AM, CB Transmitter Driver Absolute Maximum Ratings: (T = +25C, unless otherwise specified) a Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A B Total Device Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 950mW a T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.9W c Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 C/W thJC Electrical Characteristics: (T = +75C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Cutoff Current I V = 25V, I = 0 0.2 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 0.2 A EBO EB C BaseEmitter Voltage V V = 6V, I = 5mA 0.7 V BE CE C Collector Emitter Sustaining Voltage V I = 2mA 50 V CEO(sus) C Collector Emitter Saturation Voltage V 0.3 V CE(sat) II = 1A, I 1A I = 50mA50 A C B Base Emitter Saturation Voltage V 1.0 V BE(Sat) DC Current Gain h V = 2V, I = 100mA 98 649 FE CE C V = 1V, I = 1A 70 CE C Small Signal Current Gain h V = 2V, I = 10mA, f = 10MHz 18 db FE CB E Collector Capacitence C V = 10V, I = 0, f = 1MHz 16 40 pF C CB E.386 (9.8) Max .165 (4.2) Max .075 (1.9) .284 (7.22) .323 (8.2) Max .122 (3.1) Dia .288 (7.3) Max .118 (3.0) BC E .490 (12.44) Min 0.25 (0.65) Max