NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA C Total Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW T Maximum Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.2 A CBO CB E DC Current Gain h V = 10V, I = 2mA 20 60 200 FE CE C CurrentGain Bandwidth Product f V = 10V, I = 2mA 400 530 MHz T CE E Output Capacitance C V = 10V, I = 0, f = 1MHz 0.5 1.0 pF ob CB E Noise Figure NF I = 2mA, f = 200MHz 2.5 3.3 dB E Power Gain PG I = 2mA, f = 200MHz 20 23 dB E AGC Current I PG = 30dB 9 11 mA AGC.157 (4.0) Base Emitter Collector .026 (0.66) .079 (2.02) Max .008 (0.20) .150 (3.81) Dia Max