NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in largesignal output amplifier stages. Intended for use in CitizenBand communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of upmodulation in AM circuits. Features: Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 30 V (BR)CEO C B V I = 200mA, V = 0 60 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 0.01 mA CBO CB E ON Characteristics DC Current Gain h V = 2V, I = 400mA 10 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 1MHz 35 70 pF ob CB EElectrical Characteristics (Contd): (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Functional Test CommonEmitter Amplifier Power Gain G P = 3.5W, V = 12.5V, f = 27MHz 10 dB PE OUT CC Collector Efficiency P = 3.5W, V = 12.5V, f = 27MHz, 62.5 70.0 % OUT CC Note 3 Percent UpModulation f = 27MHz, Note 2 85 % Parallel Equivalent Input Resistance R P = 3.5W, V = 12.5V, f = 27MHz 21 in OUT CC Parallel Equivalent Input Capacitance C P = 3.5W, V = 12.5V, f = 27MHz 900 pF in OUT CC Parallel Equivalent Output Capaciatnce C P = 3.5W, V = 12.5V, f = 27MHz 200 pF out OUT CC Note 2. = R P 100 F OUT (V ) (I ) CC C Note 3. Percentage UpModulation is measured by setting the Carrier Power (P ) to 3.5 Watts with C V = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after CC doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther- mal considerations) and raising the V to 25Vdc (to simulate the modulating voltage). Per- CC centage UpModulation is then determined by the relation: Percentage UpModulation = (PEP) 1/2 100 1 P C .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)