NTE347 NTE

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X-On Electronics has gained recognition as a prominent supplier of NTE347 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE347 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE347
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 600mA; 15W; Pout:3W
Datasheet:	NTE347 Datasheet (PDF)

Price (USD)

2: USD 51.21 ea
Line Total: USD 102.42

Availability : 0

Qty	Unit Price
2	$ 51.21
10	$ 25.6932
25	$ 23.976
50	$ 23.3496
100	$ 22.4748

NTE347 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Wed. 03 Sep to Tue. 09 Sep

MOQ : 2
Multiples : 1

Qty	Unit Price
2	$ 51.21
10	$ 25.6932
25	$ 23.976
50	$ 23.3496
100	$ 22.4748

Availability 0

Ship by Mon. 01 Sep to Wed. 03 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 35.2121
2	$ 33.2853

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Mounting Screw Screw
Kind Of Transistor Rf Rf
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 3 W 3 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 600 mA 600 mA
Power Dissipation 15 W 15 W
Frequency 130 To 175 MHz 130 To 175 MHz

We are delighted to provide the NTE347 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE347 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE347 Silicon NPN Transistor RF Power Output P = 3W 175MHz O Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili- tary and industrial equipment operating to 240MHz. Features: Low lead inductance stripline package for easier design and increased broadband capability. Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. Specified 13.6 volt, 175MHz Characteristics Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V EB Continuous Collector Current, I 0.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W A D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V I = 200mA, I = 0 18 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 200mA, I = 0 36 V (BR)CES C B EmitterBase Breakdown Voltage V I = 1.0mA, I = 0 4.0 V (BR)CBO E C Collector Cutoff Current V V = 15V, I = 0 1.0 mA (BR)CBO CB E ON CHARACTERISTICS DC Current Gain h I = 100mA, V = 5.0Vdc 5.0 FE C CE DYNAMIC CHARACTERISTICS Output Capacitance C V = 15V, I = 0, f = 0.1 to 1.0 MHz 15 30 pF ob CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit FUNCTIONAL TEST Power Input P 0.35 0.45 W P = 3W, V = 13.6V, in OUT CE f f = 175MHz175MHz CommonEmitter Amplifier Power Gain G 8.2 dB PE Collector Efficiency 50 % 1.065 (27.08) Max .530 (13.46) C .220 (5.58) E E .305 (7.75) .030 (.762) B .375 (9.52) Dia .090 (2.28) .260 (6.60) .075 .730 .005 (0.15) (1.94) .325 (8.28) Dia (18.54) .115 (2.92) 832 NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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