NTE351 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE351 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE351 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE351
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 5A; 65W; T72H; Pout:25W
Datasheet:	NTE351 Datasheet (PDF)

Price (USD)

1: USD 106.3463 ea
Line Total: USD 106.35

Availability : 0

Qty	Unit Price
1	$ 106.3463
10	$ 62.7912
25	$ 58.6008
50	$ 54.9396

NTE351 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Wed. 03 Sep to Tue. 09 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 106.3463
10	$ 62.7912
25	$ 58.6008
50	$ 54.9396

Availability 0

Ship by Mon. 01 Sep to Wed. 03 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 81.3611

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Case T72h T72h
Mounting Screw Screw
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 25 W 25 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 5 A 5 A
Power Dissipation 65 W 65 W
Frequency 130 To 175 MHz 130 To 175 MHz

We are delighted to provide the NTE351 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE351 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE351 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum Gain = 6.2dB Efficiency = 65% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Device Dissipation (Note 1, T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B V I = 15mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB E I V = 15V, V = 0, T = +55C 10 mA CES CE BE C ON Characteristics DC Current Gain h I = 1A, V = 5V 5 FE C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 110 130 pF ob CB E Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 25W, f = 175MHz 6.2 dB PE out Power Gain Collector Efficiency P = 25W, f = 175MHz 65 % out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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