NTE360 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE360 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE360 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE360
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 35V; 5A; 60W; T72H; Pout:40W
Datasheet:	NTE360 Datasheet (PDF)

Price (USD)

1: USD 139.0612 ea
Line Total: USD 139.06

Availability : 0

Qty	Unit Price
1	$ 139.0612
5	$ 121.3164
10	$ 116.5212
25	$ 112.104

NTE360 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 02 Sep to Mon. 08 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 139.0612
5	$ 121.3164
10	$ 116.5212
25	$ 112.104

Availability 0

Ship by Fri. 29 Aug to Tue. 02 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 178.5846

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Mounting Screw Screw
Case T72h T72h
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 40 W 40 W
Collector-Emitter Voltage 35 V 35 V
Collector Current 5 A 5 A
Power Dissipation 60 W 60 W
Frequency 125 To 175 MHz 125 To 175 MHz

We are delighted to provide the NTE360 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE360 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE360 Silicon NPN Transistor RF Power Output P = 40W 175MHz O Description: The NTE360 is designed primarily for wideband large signal amplifier stages in the 125 175MHz frequency range. Features: Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts Minimum Gain = 7.6dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W C D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 342mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 35 V (BR)CEO C B V I = 200mA, V = 0, Note 1 65 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 1 mA CBO CB E On Characteristics DC Current Gain h I 500mA, V = 5.0V 5.0 FE C = CE Dynamic Characteristics Output Capacitance C V = 30V, I = 0, f = 0.1 to 1.0MHz 45 65 pF ob CB E Note 1 Pulsed through 25mH inductor.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Functional Test CommonEmitter Amplifier Power Gain G P = 40 W, V = 28 V, f = 175MHz 7.6 8.1 dB PE OUT CE Collector Efficiency P = 40 W, V = 28 V, f = 175MHz 60 % OUT CE 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 .100 (2.54) (9.8) .005 (0.15) Dia .168 (4.27) .750 (19.05) 8 32 NC 3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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