NTE36MP NTE

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X-On Electronics has gained recognition as a prominent supplier of NTE36MP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE36MP Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.

NTE36MP

Manufacturer:

NTE

Category:

Bipolar Transistors - BJT

Description:

TRANSISTOR,BJT,PAIR,NPN,140V V(BR)CEO,12; TRANSISTOR,BJT,PAIR,NPN,140V V(BR)CEO,12A I(C),TO-247AD

Datasheet:

NTE36MP Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

5: USD 18.1387 ea
Line Total: USD 90.69

Availability : 0

Qty	Unit Price
5	$ 18.1387
50	$ 11.6802
100	$ 10.7856
200	$ 10.017
500	$ 9.3492

NTE36MP More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Wed. 24 Jun to Tue. 30 Jun

MOQ : 5
Multiples : 1

Qty	Unit Price
5	$ 18.1387
50	$ 11.6802
100	$ 10.7856
200	$ 10.017
500	$ 9.3492

Availability0

Ship by Mon. 22 Jun to Wed. 24 Jun

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 22.2669
2	$ 14.6253
3	$ 14.6084
4	$ 13.8156

Specifications

Manufacturer NTENTE
Product Category Bipolar Transistors - BJTBipolar Transistors - BJT

We are delighted to provide the NTE36MP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE36MP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE36 (NPN) & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de- signed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . 140V CEO CollectorBase Voltage, V 160V CBO EmitterBase Voltage, V 6V EBO Collector Current, I C Continuous 12A Peak . 15A Total Power Dissipation (T = +25C), P . 100W C D Operating Junction Temperature, T . +150C J Storage Temperature Range, T 40 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 mA CEO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO BE C DC Current Gain h V = 5V, I = 1A 60 200 FE1 CE C h V = 5V, I = 6A 20 FE2 CE C Gain Bandwidth Product f V = 5V, I = 1A 15 MHz T CE C Output Capacitance C V = 10V, f = 1MHz pF ob CB NTE36 210 NTE37 300 BaseEmitter Voltage V V = 5V, I = 1A 1.5 V BE CE C CollectorEmitter Saturation Voltage V I = 5A, I = 500mA V CE(sat) C B NTE36 0.6 2.5 NTE37 1.1 Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 5mA, I = 0 160 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 140 V (BR)CEO C BE I = 50mA, R = 140 V C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 6 V (BR)EBO E C 10I = 10I = I = 1A, TurnOn Time t s on B1 B2 C NTE36 PW = 20 s 0.26 NTE37 0.25 Fall Time t s f NTE36 0.68 NTE37 0.53 Storage Time t s on NTE36 6.88 NTE37 1.61 Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE .190 (4.82) .615 (15.62) .670 (17.0) .197 (5.0) Max .866 (22.0) .217 OR (5.5) .787 (Note) (20.0) .591 .590 .130 (3.3) .126 (15.02) (15.0) Dia (3.22) Dia BC E .177 (4.5) .747 .787 (19.0) (20.0) Min BC E .215 (5.47) .025 (0.65) .215 (5.47) NOTE: Either case style may be shipped depending on stock.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICSmay also be referenced as

NTE ELECTRONICS, INC.

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