NTE387 Silicon NPN Transistor Power Amp, Switch Features: High CollectorEmitter Sustaining Voltage High DC Current Gain Low CollectorEmitter Saturation Voltage Fast Switching Times Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70C/W thJC Note 1. Matched pairs are available upon request (NTE387MP). Matched pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 50mA, I = 0, Note 2 150 V CEO(sus) C B Collector Cutoff Current I V = 75V, I = 0 50 A CEO CE B I V = 180V, V = 1.5V 10 A CEX CE EB(off) V = 180V, V = 1.5V, T = +150C 1.0 A CE EB(off) C Emitter Cutoff Current I V = 6V, I = 0 100 A EBO BE C Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h V = 4V, I = 1A 50 FE CE C V = 4V, I = 20A 30 120 CE C V = 4V, I = 50A 10 CE C CollectorEmitter Saturation Voltage V I = 20A, I = 2A 1 V CE(sat) C B I = 50A, I = 10A 3 V C B BaseEmitter Saturation Voltage V I = 20A, I = 2A 1.8 V BE(sat) C B I = 50A, I = 10A 3.5 V C B BaseEmitter ON Voltage V V = 4V, I = 20A 1.8 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 1A, f = 10MHz, Note 3 30 MHz T CE C test Output Capacitance C V = 10V, I = 0, f = 0.1MHz 600 pF ob CB E test Switching Characteristics Rise Time t V = 80V, I = 20A, I = 2A, V = 5V 0.35 s r CC C B1 BE(off) Storage Time t V = 80V, I = 20A, I = I = 2A 0.80 s s CC C B1 B2 Fall Time t 0.25 s f Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. f = (h ) test T fe .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case