NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: CollectorEmitter Voltage: V = 1500V CEX Glass Passivated BaseCollector Junction Forward Bias Safe Operating Area 50 s = 20A, 300V Switching Times with Inductive Loads: t = 0.5 s (Typ) I = 3A f C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Continouos Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A E Total Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W thJC Maximum Lead Temperature (For Soldering, 1/8 from Case for 5sec), T . . . . . . . . . . . . . . +275C LElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) CollectorEmitter Sustaining Voltage V I = 50mA, I = 0 750 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 1.0 mA CES CE BE Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE C ON Characteristics (Note 1) CollectorEmitter Saturation Voltage V I = 3A, I = 1.2A 5.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 3A, I = 1.2A 1.5 V BE(sat) C B Dynamic Characteristics Current Gain Bandwidth Product f I = 0.1A, V = 5V, f = 1MHz 4 MHz T C CE test Output Capacitance C V = 10V, I = 0, f = 0.1MHz 90 pF ob CB E Switching Characteristics Fall Time t I = 3A, I = 1.2A, L = 8 H 0.5 1.0 s f C B1 B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case