NTE45 NTE

NTE45 electronic component of NTE Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE45 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE45 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE45
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 100V; 100mA; 400mW; SIP5
Datasheet: NTE45 Datasheet (PDF)
Price (USD)
40: USD 1.5439 ea
Line Total: USD 61.76 
Availability : 0
  
QtyUnit Price
40$ 1.5439
50$ 1.2434
100$ 1.0843
200$ 1.0146
500$ 0.945

Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 40
Multiples : 40
QtyUnit Price
40$ 1.5439
50$ 1.2434
100$ 1.0843
200$ 1.0146
500$ 0.945


Availability 0
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7615
3$ 1.522
5$ 1.0843
23$ 1.0345

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE45 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE45 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE44 (NPN) & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Collector Power Dissipation (Per Unit), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW C Total Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125 C Junction Temperature, T J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C stg Note 1. NTE44 is a discontinued device and no longer available. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage V I = 100A, R = 100 - - V (BR)CEO C BE Collector-Cutoff Current I V = 100V, I = 0 - - 0.1 A CBO CB E I V = 100V, R = - - 10 A CEO CE BE Emitter-Cutoff Curent I V = 5V, I = 0 - - 0.1 A EBO EB C DC Current Gain h V = 6V, I = 1mA 400 - 800 FE CE C Collector-Emitter Saturation Voltage V I = 10mA, I = 1mA - - 0.3 V CE(sat) C B Base-Emitter Voltage Differetial V -V V = 6V, I = 1mA - 1 10 mV BE1 BE2 CE C Collector Current Ratio I /I V = 6V, I = 1mA 0.8 0 1.25 C2 C1 CE C1 Transistion Frequency f V = 6V, I = 1mA - 100 - MHz T CE E Collector Output Capacitance C V = 6V, I = 0, f = 1MHz - 3 - pF ob CB E Noise Figure NF V = 6V, I = 0.3, - 0.6 - dB CE E f = 100Hz, R = 1k G.320 (8.13) Max .220 (5.59) Max BC E C B .414 (10.52) Max 15 .050 (1.27) .142 (3.6) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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