NTE476 Silicon NPN Transistor RF Power Output Description: The NTE476 is a silicon epitaxial NPNplanar transistor which employs a multiemitter electrode de- sign. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resistance and low output ca- pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency multiplier circuits. Features: Designed for VHF mobile and marine transmitters High efficiency at maximum stability Improved metallization to achieve extreme ruggedness Absolute Maximum Ratings: (T = +25C except where specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A C Total Dissipation at 25C Stud, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.2W D Thermal Resistance, JunctiontoStud, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.54C/W thJC Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 18 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 500 A, I = 0 36 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 2mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 0.25 mA CBO CB E Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 13.6V 350 MHz T C CE Output Capacitance C V = 13.6V, I = 0, f = 100kHz 45 pF ob CB E Functional Tests Power Output P V = 13.6V, f = 175MHz 12 W OUT CE Power Gain (Class C) P 4.77 dB g Collector Efficiency (Class C) 80 % Note 1. Pulsed thru a 25mH inductor..200 (5.08) Collector Emitter/Stud Dia .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) .320 Max (8.22) Max .455 .113 (2.88) .078 (11.58) (1.97) Max Max 1032 NF2A