NTE478 NTE

NTE478 Silicon NPN Transistor RF Power Output, P = 100W 175MHz O Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu- nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features: Designed for VHF Military and Commercial Equipment 100W Min with Greater than 6.0dB Gain Withstands Infinite VSWR under Operating Conditions Low Intermodulation Distortion (32dB) Diffused Emitter Resistors Absolute Maximum Ratings: (T = +25C unless othrwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Total Device Dissipation (At +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static CollectorEmitter Breakdown Voltage V I = 100mA, I = 0, Note 1 18 V (BR)CEO C B V I = 100mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, i = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 12V, I = 0 10 mA CBO CB E DC Current Gain h V = 6V, I = 5A 10 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Output Power P V = 12.5V, f = 175MHz 100 W O CE Power Gain P V = 12.5V, f = 175MHz 6 7 dB G CE Impedance Z V = 12.5V, P = 20W, f = 175MHz 1.5 j0.9 s CE i Z 0.5 j0.1 cl Output Capacitance C V = 12V, I = 0, f = 1MHz 354 pF ob CB E .205 (5.18) .215 (5.48) .122 (3.1) Dia EB .405 (10.3) Min CE .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)