NTE52 NTE

NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, highspeed power switching in inductive circuits where fall time is critical. This device is particularly suited for lineoperated switchmode appliations. Applications: Switching Regulators Motor Controls Inverters Solenoid and Relay Drivers Features: Fast TurnOff Times: 100ns Inductive Fall Time +25C (Typ) 150ns Inductive Crossover Time +25C (Typ) 400ns Inductive Storage Time +25C (Typ) Operating Temperature Range: 65 to +200C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.714W/C Total Device Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71.5W C D Operating Junction Temperatur Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperatur Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W thJC Maximum Lead temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Charactetristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 450 V CEO(sus) C B Collector Cutoff Current I V = 750V, V = 1.5V 0.5 mA CEV CEV BE(off) V = 750V, V = 1.5V, 2.5 mA CEV BE(off) T = +100C C I V = 750V, R = 50 , T = +100C 3.0 mA CER CEV BE C Emitter Cutoff Current I V = 6V, I = 0 1.0 mA EBO EB C ON Characteristics (Note 2) DC Current Gain h V = 5V, I = 3A 8 FE CE C CollectorEmitter Saturation Voltage V I = 3A, I = 0.6A 1.0 V CE(sat) C B I = 3A, I = 0.6A, T = +100C 2.0 V C B C I = 5A, I = 1A 3.0 V C B BaseEmitter Saturation Voltage V I = 3A, I = 0.6A 1.5 V BE(sat) C B I = 3A, I = 0.6A, T = +100C 1.5 V C B C Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 1kHz 250 pF ob CB E Switching Characteristics (Resistive Load) Delay Time t 0.03 0.05 s V = 250V, I = 3A, I = 0.4A, d CC C B1 V = 5V, t = 300 s, BE(off) p Rise Time t 0.10 1.40 s r DutyDuty Cycle Cycle 2% 2% Storage Time t 0.40 0.50 s s Fall Time t 0.175 0.500 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t I = 3A peak, V = 250V, I = 0.4A, 0.40 s sv C clamp B1 V = 5V BE(off) Crossover Time t 0.15 s c Fall Time t 0.10 s fi Storage Time t I = 3A peak, V = 250V, I = 0.4A, 0.70 2.0 s sv C clamp B1 V = 5V, T = +100C BE(off) J Crossover Time t 0.28 0.50 s c Fall Time t 0.15 0.30 s fi Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%.