NTE58 (NPN) & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: High Power Dissipation Wide Safe Operating Area Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W FL C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 50mA 200 V (BR)CEO C Maximum Collector Cutoff Current I V = 200V, I = 0 0.1 mA CBO CB E Maximum Emitter Cutoff Current I V = 6V, I = 0 0.1 mA EBO EB C DC Forward Current Transfer Ratio h V = 4V, I = 8A 20 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 2.5 V CE(sat) C B Second Breakdown Collector Current I V = 100V, t = 1sec 1 A S/b CE Cutoff Frequency f V = 12V, I = 1A 20 MHz T CE E1.430 (36.32) .961 (24.42) .843 (21.42) BC E .788 (20.02) Min .215 (5.48) .118 (3.0) .244 (6.2) Max Collector connected to Tab