X-On Electronics has gained recognition as a prominent supplier of 2PB709ARL,215 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2PB709ARL,215 bipolar transistors - bjt are a product manufactured by NXP. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2PB709ARL,215 NXP

2PB709ARL,215 electronic component of NXP
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See Product Specifications
Part No.2PB709ARL,215
Manufacturer: NXP
Category:Bipolar Transistors - BJT
Description: Trans GP BJT PNP 45V 0.1A Automotive 3-Pin TO-236AB T/R
Datasheet: 2PB709ARL,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

108: USD 0.3206 ea
Line Total: USD 34.62

Availability - 0
MOQ: 108  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the 2PB709ARL,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PB709ARL,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

2PB709ARL 2PB709ASL 45 V, 100 mA PNP general-purpose transistors Rev. 01 12 November 2008 Product data sheet 1. Product prole 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview 1 Type number Package NPN complement NXP JEDEC 2PB709ARL SOT23 TO-236AB 2PD601ARL 2PB709ASL 2PD601ASL 2PB709ARL/DG SOT23 TO-236AB 2PD601ARL/DG 2PB709ASL/DG 2PD601ASL/DG 1 /DG: halogen-free 1.2 Features n General-purpose transistors n Two current gain selections n AEC-Q101 qualied n Small SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 45 V CEO I collector current - - - 100 mA C h DC current gain V = - 10 V FE CE I = - 2mA C h group R 210 - 340 FE h group S 290 - 460 FE2PB709ARL 2PB709ASL NXP Semiconductors 45 V, 100 mA PNP general-purpose transistors 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym013 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version 2PB709ARL - plastic surface-mounted package 3 leads SOT23 2PB709ASL 2PB709ARL/DG 2PB709ASL/DG 1 /DG: halogen-free 4. Marking Table 5. Marking codes 1 Type number Marking code 2PB709ARL SN* 2PB709ASL SL* 2PB709ARL/DG SS* 2PB709ASL/DG SZ* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 2PB709AXL 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 12 November 2008 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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NXP
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NXP / Freescale
NXP SEMI
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PH3
PHI

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