Product Information

BC52PASX

BC52PASX electronic component of NXP

Datasheet
Bipolar Transistors - BJT 1A PNP Medium Power Transistors

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1073 ea
Line Total: USD 321.9

0 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1073

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.5217
10 : USD 0.3896
100 : USD 0.2427
500 : USD 0.166
1000 : USD 0.1277

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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BC51PAS BC52PAS BC53PAS 45 V/60 V/80 V, 1 A PNP medium power transistors Rev. 1 19 June 2015 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Table 1. Product overview 1 Type number Package NPN complement BC51PAS DFN2020D-3 SOT1061D BC54PAS BC52PAS BC55PAS BC53PAS BC56PAS 1 Valid for all available selection groups. 1.2 Features and benefits High collector current capability Three current gain selections I and I C CM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base CEO BC51PAS series - - 45 V BC52PAS series - - 60 V BC53PAS series - - 80 VBC51PAS BC52PAS BC53PAS Nexperia 45 V/60 V/80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit I collector current - - 1A C I peak collector current single pulse t 1ms - - 2A CM p 1 h DC current gain V = 2V I = 150 mA 63 - 250 FE CE C 1 h selection -10 V = 2V I = 150 mA 63 - 160 FE CE C 1 h selection -16 V = 2V I = 150 mA 100 - 250 FE CE C 1 Pulse test: t 300 ms 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector P V UDQVSDUHQW WRS YLHZ 7 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version BC51PAS series DFN2020D-3 plastic thermal enhanced ultra thin small SOT1061D outline package no leads 3 terminals BC52PAS series body 2 2 0.65 mm. BC53PAS series 1 Valid for all available selection groups. BC51 52 53PAS SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 19 June 2015 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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