BFG135,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, lfpage 4 1emitter intended for wideband amplifier 2base applications. The small emitter structures, with integrated 3emitter emitter-ballasting resistors, ensure 4 collector high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives 123 an excellent temperature profile. MSB002 - 1 Top view Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 150 mA C P total power dissipation up to T =145 C (note 1) 1W tot s h DC current gain I =100 mA V =10V T =25 C80 130 FE C CE j f transition frequency I =100 mA V =10V f= 1GHz 7 GHz T C CE T =25 C amb G maximum unilateral power I =100 mA V = 10 V f = 500 MHz 16 dB UM C CE gain T =25 C amb I =100 mA V = 10 V f = 800 MHz 12 dB C CE T =25 C amb V output voltage d = 60 dB I = 100 mA V =10V 850 mV o im C CE R =75 T =25 C L amb f = 793.25 MHz (p+qr) LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2V EBO I DC collector current 150 mA C P total power dissipation up to T =145 C (note 1) 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 13 2