PBSS3515E
15 V, 0.5 A PNP low V (BISS) transistor
CEsat
Rev. 02 27 April 2009 Product data sheet
1. Product prole
1.1 General description
PNP low V Breakthrough In Small Signal (BISS) transistor in an ultra small
CEsat
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515E.
1.2 Features
n Low collector-emitter saturation voltage V
CEsat
n High collector current capability I and I
C CM
n High collector current gain (h ) at high I
FE C
n High efciency due to less heat generation
n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
n DC-to-DC conversion
n MOSFET gate driving
n Motor control
n Charging circuits
n Low power switches (e.g. motors, fans)
n Portable applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V collector-emitter voltage open base - - - 15 V
CEO
I collector current - - - 0.5 A
C
I peak collector current single pulse; -- -1A
CM
t 1ms
p
[1]
R collector-emitter I = - 500 mA; - 300 500 m
CEsat C
saturation resistance I = - 50 mA
B
[1] Pulse test: t 300 s; 0.02.
pPBSS3515E
NXP Semiconductors
15 V, 0.5 A PNP low V (BISS) transistor
CEsat
2. Pinning information
Table 2. Pinning
Pin Description Simplied outline Graphic symbol
1 base
3 3
2 emitter
3 collector
1
12
2
sym013
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS3515E SC-75 plastic surface-mounted package; 3 leads SOT416
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS3515E 1R
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V collector-base voltage open emitter - - 15 V
CBO
V collector-emitter voltage open base - - 15 V
CEO
V emitter-base voltage open collector - -6V
EBO
I collector current - - 0.5 A
C
I peak collector current single pulse; - -1A
CM
t 1ms
p
I peak base current single pulse; - - 100 mA
BM
t 1ms
p
[1]
P total power dissipation T 25 C - 150 mW
tot amb
[2]
- 250 mW
T junction temperature - 150 C
j
T ambient temperature - 65 +150 C
amb
T storage temperature - 65 +150 C
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
PBSS3515E_2 NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 27 April 2009 2 of 12