X-On Electronics has gained recognition as a prominent supplier of PBSS4032PD bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PBSS4032PD bipolar transistors - bjt are a product manufactured by NXP. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PBSS4032PD

PBSS4032PD electronic component of NXP
Images are for reference only
See Product Specifications
Part No.PBSS4032PD
Manufacturer: NXP
Category:Bipolar Transistors - BJT
Description: Trans GP BJT PNP 30V 2.7A 6-Pin TSOP
Datasheet: PBSS4032PD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

59: USD 0.4053 ea
Line Total: USD 23.91

Availability - 0
MOQ: 59  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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PBSS4032PD 30 V, 2.7 A PNP low V (BISS) transistor CEsat Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032ND. 1.2 Features Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 2.7 A C I peak collector current single pulse; -- 5A CM t 1ms p [1] R collector-emitter I = 3A; -88 130 m CEsat C saturation resistance I = 300 mA B [1] Pulse test: t 300 s; 0.02. pPBSS4032PD NXP Semiconductors 30 V, 2.7 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 collector 6 5 4 1, 2, 5, 6 2 collector 3base 3 4emitter 132 4 5 collector sym030 6 collector 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032PD SC-74 plastic surface-mounted package; 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032PD ZG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 2.7 A C I peak collector current single pulse; - 5A CM t 1ms p I base current - 0.5 A B PBSS4032PD_1 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 27 January 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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