PBSS5330PASX NXP

PBSS5330PASX electronic component of NXP
PBSS5330PASX NXP
PBSS5330PASX Bipolar Transistors - BJT
PBSS5330PASX  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PBSS5330PASX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5330PASX Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS5330PASX
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 30V 3A PNP low VCEsat (BISS) trans
Datasheet: PBSS5330PASX Datasheet (PDF)
Price (USD)
3000: USD 0.3348 ea
Line Total: USD 1004.4 
Availability : 0
  
QtyUnit Price
3000$ 0.3348
6000$ 0.302
15000$ 0.2947

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3348
6000$ 0.302
15000$ 0.2947

   
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Product Category
RoHS - XON
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We are delighted to provide the PBSS5330PASX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5330PASX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation High temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -3 A C I peak collector current single pulse t 1 ms - - -5 A CM p R collector-emitter I = -3 A I = -300 mA pulsed - 75 107 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym013 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5330PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS5330PAS E2 PBSS5330PAS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2014 2 / 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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