PUML1,115

PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 14 July 2008 Product data sheet 1. Product prole 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features n General-purpose transistor: u 200 mA collector current I C n Resistor-equipped transistor: u Built-in bias resistors n Simplies circuit design n Reduces component count n Reduces pick and place costs n Very small SMD plastic package n AEC-Q101 qualied 1.3 Applications n Inverter and switches n Low-frequency amplier n Driver stages 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (general-purpose transistor) V collector-emitter voltage open base - - 50 V CEO I collector current - - 200 mA C h DC current gain V =10V 210 - 340 FE CE I =2mA C TR2 (resistor-equipped transistor) V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2PUML1/DG NXP Semiconductors 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 65 4 6 5 4 2 base TR1 3 output (collector) TR2 R1 R2 4 GND (emitter) TR2 TR2 132 5 input (base) TR2 TR1 6 collector TR1 12 3 006aab253 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PUML1/DG SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code PUML1/DG PA* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (general-purpose transistor) V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 100 mA BM t 1ms p PUML1 DG 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 14 July 2008 2 of 12