Product Information

15C02MH-TL-E

15C02MH-TL-E electronic component of ON Semiconductor

Datasheet
Bipolar Transistors - BJT BIP NPN 1A 15V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6765 ea
Line Total: USD 0.68

7704 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7697 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

15C02MH-TL-E
ON Semiconductor

1 : USD 0.4474
10 : USD 0.176
100 : USD 0.1541
1000 : USD 0.1208
3000 : USD 0.1058
9000 : USD 0.0943
24000 : USD 0.0897
45000 : USD 0.0862
99000 : USD 0.0828

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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LOT No. LOT No. Ordering number : EN7354B 15C02MH Bipolar Transistor 15C02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =12V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =2V, I =50mA 300 800 FE CE C Gain-Bandwidth Product f V =2V, I =50mA 440 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 4 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =400mA, I =20mA 140 280 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =400mA, I =20mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 20 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 15 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 165 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 + + 220 F 470 F V = --5V V =5V BE CC I =20I = --20I =400mA C B1 B2 Ordering Information Device Package Shipping memo 15C02MH-TL-E MCPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C BE 1000 1200 V =2V CE 900 1000 800 700 800 600 600 500 400 400 300 0.6mA 200 200 0.3mA 100 I =0mA B 0 0 0 100 200 300 400 500 600 700 800 900 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- mV IT05037 Base-to-Emitter Voltage, V -- V IT05038 CE BE No.7354-2/6 1.0mA 1.5mA 2.0mA 3.0mA 5.0mA 7.0mA 10.0mA 20.0mA 30.0mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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