2N3416 / 2N3417 2N3416 2N3417 TO-92 B C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO VCBO Collector-Base Voltage 50 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3416 / 2N3417 P Total Device Dissipation 625 mW D 5.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC Thermal Resistance, Junction to Ambient 200 R C/W JA 3416-3417, Rev B 1997 Fairchild Semiconductor Corporation2N3416 / 2N3417 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 50 V Voltage* V Collector-Base Breakdown Voltage I = 10 A, I = 0 50 V (BR)CBO C E V Emitter-Base Breakdown Voltage 5.0 V (BR)EBO I = 10 A, I = 0 E C I Collector-Cutoff Current V = 25 V, I = 0 100 nA CBO CB E 15 V = 18 V, I = 0, T = 100C A CB E A I Emitter-Cutoff Current V = 5.0 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS* h DC Current Gain V = 4.5 V, I = 2.0 mA FE CE C 2N3416 75 225 180 540 2N3417 Collector-Emitter Saturation Voltage I = 50 mA, I = 3.0 mA 0.3 V V C B CE(sat) Base-Emitter Saturation Voltage I = 50 mA, I = 3.0 mA 0.6 1.3 V VBE(sat) C B SMALL SIGNAL CHARACTERISTICS Small-Signal Current Gain I = 2.0 mA, V = 4.5 V, h C CE fe f = 1.0 kHz 2N3416 75 180 2N3417 *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%