Product Information

2N5684G

2N5684G electronic component of ON Semiconductor

Datasheet
Transistors Bipolar - BJT 50A 80V 300W PNP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 13.4173 ea
Line Total: USD 1341.73

679 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
679 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 100
Multiples : 100

Stock Image

2N5684G
ON Semiconductor

100 : USD 13.4173
200 : USD 12.4267
300 : USD 12.1782
500 : USD 12.1782
1000 : USD 12.1782

32 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

2N5684G
ON Semiconductor

1 : USD 21.268
10 : USD 18.824
25 : USD 17.368
50 : USD 16.887
100 : USD 16.393

72 - WHS 3


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 9
Multiples : 1

Stock Image

2N5684G
ON Semiconductor

9 : USD 14.5991

679 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 100
Multiples : 100

Stock Image

2N5684G
ON Semiconductor

100 : USD 13.4173
200 : USD 12.4267
300 : USD 12.1782

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. 2N5684 (PNP), 2N5686 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (I = 0.2 Adc, I = 0) V 80 - Vdc C B CEO(sus) Collector Cutoff Current (V = 40 Vdc, I = 0) I - 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 80 Vdc, V = 1.5 Vdc) - 2.0 CE EB(off) (V = 80 Vdc, V = 1.5 Vdc, T = 150 C) - 10 CE EB(off) C Collector Cutoff Current (V = 80 Vdc, I = 0) I - 2.0 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I - 5.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h - FE (I = 25 Adc, V = 2.0 Vdc) C CE 15 60 (I = 50 Adc, V = 5.0 Vdc) C CE 5.0 - Collector-Emitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) C B - 1.0 (I = 50 Adc, I = 10 Adc) C B - 5.0 Base-Emitter Saturation Voltage (Note 2) (I = 25 Adc, I = 2.5 Adc) V - 2.0 Vdc C B BE(sat) Base-Emitter On Voltage (Note 2) (I = 25 Adc, V = 2.0 Vdc) V - 2.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (I = 5.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.0 - MHz C CE T Output Capacitance 2N5684 C - 2000 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N5686 - 1200 CB E Small-Signal Current Gain (I = 10 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 15 - C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V - 30 V CC R L + 2.0 V TO SCOPE 0 1.0 t 20 ns r R B 0.7 t r 0.5 -12 V t r 20 ns 0.3 10 to 100 s 0.2 2N5684 (PNP) DUTY CYCLE 2.0% t V - 30 V 2N5686 (NPN) d CC 0.1 R L 0.07 +10 V 0.05 TO SCOPE T = 25C J 0 0.03 t 20 ns r I /I = 10 C B R B 0.02 V = 30 V CC -12 V t 20 ns r 0.01 V + 4.0 V 10 to 100 s BB 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) DUTY CYCLE 2.0% C FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED. B L Figure 3. Turn-On Time INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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