Product Information

2N5885G

2N5885G electronic component of ON Semiconductor

Datasheet
Bipolar (BJT) Transistor NPN 60 V 25 A 4MHz 200 W Through Hole TO-204 (TO-3)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 4.0691 ea
Line Total: USD 406.91

32 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
32 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 100
Multiples : 100

Stock Image

2N5885G
ON Semiconductor

100 : USD 4.0691

32 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 33
Multiples : 33

Stock Image

2N5885G
ON Semiconductor

33 : USD 4.0691

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon HighPower Transistors Complementary silicon highpower transistors are designed for generalpurpose power amplifier and switching applications. 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ELECTRICAL CHARACTERISTICS (Note 2) (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 3) 2N5883, 2N5885 V 60 Vdc CEO(sus) (I = 200 mAdc, I = 0) 2N5884, 2N5886 80 C B Collector Cutoff Current I CEO (V = 30 Vdc, I = 0) 2N5883, 2N5885 2.0 mAdc CE B (V = 40 Vdc, I = 0) 2N5984, 2N5886 2.0 CE B Collector Cutoff Current I CEX (V = 60 Vdc, V = 1.5 Vdc) 2N5883, 2N5885 mAdc CE BE(off) 1.0 (V = 80 Vdc, V = 1.5 Vdc) 2N5884, 2N5886 CE BE(off) 1.0 (V = 60 Vdc, V = 1.5 Vdc, T = 150C) 2N5883, 2N5885 CE BE(off) C 10 (V = 80 Vdc, V = 1.5 Vdc, T = 150C) 2N5884, 2N5886 CE BE(off) C 10 Collector Cutoff Current I CBO (V = 60 Vdc, I = 0) 2N5883, 2N5885 mAdc CB E 1.0 (V = 80 Vdc, I = 0) 2N5884, 2N5886 CB E 1.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 1.0 mAdc EB C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 3.0 Adc, V = 4.0 Vdc) 35 C CE (I = 10 Adc, V = 4.0 Vdc) 20 100 C CE (I = 25 Adc, V = 4.0 Vdc) 4.0 C CE CollectorEmitter Saturation Voltage (Note 3) V CE(sat) (I = 15 Adc, I = 1.5 Adc) 1.0 Vdc C B (I = 25 Adc, I = 6.25 Adc) 4.0 C B BaseEmitter Saturation Voltage (Note 3) (I = 25 Adc, I = 6.25 Adc) V 2.5 Vdc C B BE(sat) BaseEmitter On Voltage (Note 3) (I = 10 Adc, V = 4.0 Vdc) V 1.5 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 4.0 MHz C CE test T Output Capacitance 2N5883, 2N5884 C 1000 pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 2N5885, 2N5886 500 CB E SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 20 C CE test fe SWITCHING CHARACTERISTICS Rise Time t 0.7 s r (V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc) Storage Time t 1.0 s CC C B1 B2 s Fall Time t 0.8 s f 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f . T fe test 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 T , CASE TEMPERATURE (C) C Figure 1. Power Derating

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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