X-On Electronics has gained recognition as a prominent supplier of 2N6027RL1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6027RL1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6027RL1G ON Semiconductor

2N6027RL1G electronic component of ON Semiconductor
2N6027RL1G ON Semiconductor
2N6027RL1G Bipolar Transistors - BJT
2N6027RL1G  Semiconductors

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See Product Specifications
Part No. 2N6027RL1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 40V 300mW PUT
Datasheet: 2N6027RL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4964
10 : USD 0.3881
25 : USD 0.3281
100 : USD 0.2672
250 : USD 0.2213
500 : USD 0.1828
1000 : USD 0.1369
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Rated Repetitive Off-State Voltage Vdrm
Brand
Maximum Gate Peak Inverse Voltage
Non Repetitive On-State Current
Factory Pack Quantity :
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We are delighted to provide the 2N6027RL1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6027RL1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Preferred Device Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction 2N6027, 2N6028 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R 75 C/W JC Thermal Resistance, Junction to Ambient R 200 C/W JA Maximum Lead Temperature for Soldering Purposes T 260 C L ( 1/16 from case, 10 secs max) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current 2,9,11 I A P (V = 10 Vdc, R = 1 M) 2N6027 1.25 2.0 S G 2N6028 0.08 0.15 (V = 10 Vdc, R = 10 k ohms) 2N6027 4.0 5.0 S G 2N6028 0.70 1.0 *Offset Voltage 1 V Volts T (V = 10 Vdc, R = 1 M) 2N6027 0.2 0.70 1.6 S G 2N6028 0.2 0.50 0.6 (V = 10 Vdc, R = 10 k ohms) (Both Types) 0.2 0.35 0.6 S G *Valley Current 1,4,5 I A V (V = 10 Vdc, R = 1 M) 2N6027 18 50 S G 2N6028 18 25 (V = 10 Vdc, R = 10 k ohms) 2N6027 70 150 S G 2N6028 25 150 (V = 10 Vdc, R = 200 ohms) 2N6027 1.5 mA S G 2N6028 1.0 *Gate to Anode Leakage Current I nAdc GAO (V = 40 Vdc, T = 25C, Cathode Open) 1.0 10 S A (V = 40 Vdc, T = 75C, Cathode Open) 3.0 S A Gate to Cathode Leakage Current I 5.0 50 nAdc GKS (V = 40 Vdc, Anode to Cathode Shorted) S (1) *Forward Voltage (I = 50 mA Peak) 1,6 V 0.8 1.5 Volts F F *Peak Output Voltage 3,7 V 6.0 11 Volt o (V = 20 Vdc, C = 0.2 F) G C Pulse Voltage Rise Time 3 t 40 80 ns r (V = 20 Vdc, C = 0.2 F) B C *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 sec, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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