Product Information

2N6517RLRA

2N6517RLRA electronic component of ON Semiconductor

Datasheet
2N6517RLRA #0202 PCN12106 T/HOLE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5862 ea
Line Total: USD 0.59

0 - Global Stock
Ships to you by
Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you by Thu. 02 May

MOQ : 1
Multiples : 1

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2N6517RLRA
ON Semiconductor

1 : USD 0.5862
10 : USD 0.2931
25 : USD 0.2638
100 : USD 0.2198
500 : USD 0.1978

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

NPN 2N6515, 2N6517 PNP 2N6520 High Voltage Transistors NPN and PNP Features NPN 2N6515, 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N6515 250 C B 2N6517, 2N6520 350 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0 ) 2N6515 250 C E 2N6517, 2N6520 350 EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 2N6515, 2N6517 6.0 E C 2N6520 5.0 Collector Cutoff Current I nAdc CBO (V = 150 Vdc, I = 0) 2N6515 50 CB E (V = 250 Vdc, I = 0) 2N6517, 2N6520 50 CB E Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) 2N6515, 2N6517 50 EB C (V = 4.0 Vdc, I = 0) 2N6520 50 EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 2N6515 35 C CE 2N6517, 2N6520 20 (I = 10 mAdc, V = 10 Vdc) 2N6515 50 C CE 2N6517, 2N6520 30 (I = 30 mAdc, V = 10 Vdc) 2N6515 50 300 C CE 2N6517, 2N6520 30 200 (I = 50 mAdc, V = 10 Vdc) 2N6515 45 220 C CE 2N6517, 2N6520 20 200 (I = 100 mAdc, V = 10 Vdc) 2N6515 25 C CE 2N6517, 2N6520 15 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.30 C B (I = 20 mAdc, I = 2.0 mAdc) 0.35 C B (I = 30 mAdc, I = 3.0 mAdc) 0.50 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.75 C B (I = 20 mAdc, I = 2.0 mAdc) 0.85 C B (I = 30 mAdc, I = 3.0 mAdc) 0.90 C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 100 mAdc, V = 10 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) f 40 200 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E EmitterBase Capacitance C pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 2N6515, 2N6517 80 EB C 2N6520 100 SWITCHING CHARACTERISTICS TurnOn Time t 200 s on (V = 100 Vdc, V = 2.0 Vdc, I = 50 mAdc, I = 10 mAdc) CC BE(off) C B1 TurnOff Time t 3.5 s off (V = 100 Vdc, I = 50 mAdc, I = I = 10 mAdc) CC C B1 B2 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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