X-On Electronics has gained recognition as a prominent supplier of 2SA1417T-TD-E bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SA1417T-TD-E bipolar transistors - bjt are a product manufactured by ON Semiconductor. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SA1417T-TD-E

2SA1417T-TD-E electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2SA1417T-TD-E
Manufacturer: ON Semiconductor
Category:Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNP 2A 100V
Datasheet: 2SA1417T-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7829 ea
Line Total: USD 1.78

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 0.3116
2000 : USD 0.3085
3000 : USD 0.3054
4000 : USD 0.3024
5000 : USD 0.2994
6000 : USD 0.2964
10000 : USD 0.2934
20000 : USD 0.2904
50000 : USD 0.2876

0 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5694
10 : USD 0.4733
30 : USD 0.4329
100 : USD 0.3816
500 : USD 0.3584
1000 : USD 0.346

0 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7829
10 : USD 0.858
100 : USD 0.478
500 : USD 0.3777
1000 : USD 0.302
2000 : USD 0.2763

0 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

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Multiples : 1
3 : USD 0.5908
25 : USD 0.5446
41 : USD 0.3962
112 : USD 0.3738

0 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 29
Multiples : 20
29 : USD 0.5296

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor 2SA1417 / 2SC3647 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)100V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)5V, I =(--)100mA 100* 400* FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)100mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (25)16 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)100mA (--0.22)0.13 (--0.6)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)100mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (80)80 ns on Storage Time t See speci ed Test Circuit. (750)1000 ns stg Fall Time t (40)50 ns f * : The 2SA1417 / 2S3647 are classi ed by 100mA h as follws : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V B R R L + + 50 100F 470F V = --5V V =50V BE CC I =10I = --10I =0.7A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA1417S-TD-E PCP 1,000pcs./reel 2SA1417T-TD-E PCP 1,000pcs./reel Pb Free 2SC3647S-TD-E PCP 1,000pcs./reel 2SC3647T-TD-E PCP 1,000pcs./reel No.2006-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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