Ordering number : EN6306B 2SA2012 Bipolar Transistor 2SA2012 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I --600 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--30V, I =0A --0.1 A CBO CB E Emitter Cutoff Current I V =--4V, I =0A --0.1 A EBO EB C DC Current Gain h V =--2V, I =--500mA 200 560 FE CE C Gain-Bandwidth Product f V =--10V, I =--500mA 350 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz 30 pF CB V (sat)1 I =--1.5A, I =--30mA --140 --210 mV CE C B Collector to Emitter Saturation Voltage V (sat)2 I =--2.5A, I =--125mA --170 --260 mV CE C B Base to Emitter Saturation Voltage V (sat) I =--1.5A, I =--30mA --0.83 --1.2 V BE C B Collector to Base Breakdown Voltage V I =--10A, I =0A --30 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =--1mA, R = --30 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =--10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 50 ns on Storage Time t See speci ed Test Circuit. 270 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 OUTPUT INPUT R B 24 V R + + 50 100F 470F V =5V V = --12V BE CC I =20I = --20I = --500mA C B1 B2 Ordering Information Device Package Shipping memo 2SA2012-TD-E PCP 1,000pcs./reel Pb Free No.6306-2/5