Ordering number : EN7920B 2SA2124 Bipolar Transistor 2SA2124 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I --400 mA B 2 When mounted on ceramic substrate (450mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--30V, I =0A --0.1 A CBO CB E Emitter Cutoff Current I V =--4V, I =0A --0.1 A EBO EB C h1V =--2V, I =--100mA 200 560 FE CE C DC Current Gain h2V =--2V, I =--1.5A 65 FE CE C Gain-Bandwidth Product f V =--10V, I =--300mA 440 MHz T CE C Collector-to-Emitter Saturation Voltage V (sat) I =--1.5A, I =--75mA --0.2 --0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =--1.5A, I =--75mA --0.95 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I =--10A, I =0A --30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =--1mA, R = --30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =--10 A, I =0A --6 V (BR)EBO E C Output Capacitance Cob V =--10V, f=1MHz 17 pF CB Turn-ON Time t 45 ns on Storage Time t See speci ed Test Circuit. 200 ns stg Fall Time t 23 ns f Switching Time Test Circuit I B1 I C PW=20s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 220F 470F V =5V V = --12V BE CC I =20I = --20I = --0.5A C B1 B2 Ordering Information Device Package Shipping memo 2SA2124-TD-E PCP 1,000pcs./reel Pb Free No.7920-2/7