Ordering number : EN7990A 2SA2126 Bipolar Transistor 2SA2126 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.8 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --1 A CBO CB E Emitter Cutoff Current I V = --4V, I =0A --1 A EBO EB C DC Current Gain h V = --2V, I = --100mA 200 560 FE CE C Gain-Bandwidth Product f V = --10V, I = --500mA 390 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 24 pF CB V (sat)1 I = --1A, I = --50mA --135 --270 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I = --2A, I = --100mA --260 --520 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --2A, I = --100mA --0.96 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --100A, R =0 --50 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --6 V (BR)EBO E C Turn-On Time t 30 ns on Storage Time t See speci ed Test Circuit. 230 ns stg Fall Time t 18 ns f Switching Time Test Circuit I B1 PW=20s D.C. 1% I B2 OUTPUT INPUT V R R B R L + + 50 100F 470F V =5V V = --25V BE CC --10I =10I = I = --1A B1 B2 C Ordering Information Device Package Shipping memo 2SA2126-E TP 500pcs./bag Pb Free 2SA2126-H TP 500pcs./bag Pb Free and Halogen Free 2SA2126-TL-E TP-FA 700pcs./reel Pb Free 2SA2126-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free No.7990-2/9