X-On Electronics has gained recognition as a prominent supplier of 2SB1203S-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1203S-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1203S-TL-E ON Semiconductor

2SB1203S-TL-E electronic component of ON Semiconductor
2SB1203S-TL-E ON Semiconductor
2SB1203S-TL-E Bipolar Transistors - BJT
2SB1203S-TL-E  Semiconductors

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See Product Specifications
Part No. 2SB1203S-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 5 A 130MHz 1 W Surface Mount TP-FA
Datasheet: 2SB1203S-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
695: USD 0.6754 ea
Line Total: USD 469.4 
Availability - 7817
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 695  Multiples: 1
Pack Size: 1
Availability Price Quantity
5432
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 695
Multiples : 1
695 : USD 0.6754
1000 : USD 0.6229
10000 : USD 0.5552
100000 : USD 0.4651

7817
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 695
Multiples : 1
695 : USD 0.6754
1000 : USD 0.6229
10000 : USD 0.5552
100000 : USD 0.4651

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1203S-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1203S-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor 2SB1203 / 2SD1803 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1W Collector Dissipation P C Tc=25C20W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)1 A EBO EB C h1V =(--)2V, I =(--)0.5A 70* 400* FE CE C DC Current Gain h2V =(--)2V, I =(--)4A 35 FE CE C Gain-Bandwidth Product f V =(--)5V, I =(--)1A (130)180 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (60)40 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)3A, I =(--)0.15A (--280)220 (--550)400 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)3A, I =(--)0.15A (--)0.95 (--)1.3 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (50)50 ns on Storage Time t See speci ed Test Circuit. (450)500 ns stg Fall Time t (20)20 ns f : The 2SB1203/2SD1803 are classi ed by 0.5A h as follows : * FE Rank Q R S T h 70 to 140 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20M s OUTPUT D.C. b 1% I B2 INPUT R B V R R L 50 7 + + 100 M F 470 M F V = --5V V =25V BE CC I =10I = --10I =2A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SB1203S-E TP 500pcs./bag Pb Free 2SB1203S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1203T-E TP 500pcs./bag Pb Free 2SD1203T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1803S-E TP 500pcs./bag Pb Free 2SB1803S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1803T-E TP 500pcs./bag Pb Free 2SD1803T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1203S-TL-E TP-FA 700pcs./reel Pb Free 2SB1203S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1203T-TL-E TP-FA 700pcs./reel Pb Free 2SB1203T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803S-TL-E TP-FA 700pcs./reel Pb Free 2SB1803S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803T-TL-E TP-FA 700pcs./reel Pb Free 2SB1803T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free No.2085-2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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