2SC3646S-TD-E ON Semiconductor

2SC3646S-TD-E electronic component of ON Semiconductor
2SC3646S-TD-E ON Semiconductor
2SC3646S-TD-E Bipolar Transistors - BJT
2SC3646S-TD-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SC3646S-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3646S-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SC3646S-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 500 mW Surface Mount PCP
Datasheet: 2SC3646S-TD-E Datasheet (PDF)
Price (USD)
1: USD 0.9375 ea
Line Total: USD 0.94 
Availability : 2538
  
Ship by Wed. 17 Sep to Fri. 19 Sep
QtyUnit Price
1$ 0.9375
10$ 0.5938
100$ 0.3542
500$ 0.3102
1000$ 0.2794
2000$ 0.2409
5000$ 0.22

Availability 2538
Ship by Wed. 17 Sep to Fri. 19 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9375
10$ 0.5938
100$ 0.3542
500$ 0.3102
1000$ 0.2794
2000$ 0.2409
5000$ 0.22


Availability 48
Ship by Fri. 26 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.659
10$ 0.6452
30$ 0.634
100$ 0.4223

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC3646S-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3646S-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)100V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)5V, I =(--)100mA 100* 400* FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)100mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (13)8.5 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--0.2)0.1 (--0.6)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (80)80 ns on Storage Time t See speci ed Test Circuit. (700)850 ns stg Fall Time t (40)50 ns f * : The 2SA1416 / 2SC3646 are classi ed by 100mA h as follows : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 INPUT R B R L V R 50 + + 100F 470F --5V 50V I =10I =--10I =400mA C B1 B2 (For PNP, the polarity is reversed) Ordering Information Device Package Shipping memo 2SA1416S-TD-E PCP 1,000pcs./reel 2SA1416T-TD-E PCP 1,000pcs./reel Pb Free 2SC3646S-TD-E PCP 1,000pcs./reel 2SC3646T-TD-E PCP 1,000pcs./reel No.2005-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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