Ordering number:ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applicaions. 2084B 2SA1827/2SC4731 4.5 Features 1.9 2.6 10.5 1.2 1.4 Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Excellent linearity of DC Current Gain. Fast switching speed. 1.2 0.5 1.6 0.5 12 3 1 : Emitter 2 : Collector Specifications 3 : Base 2.5 2.5 SANYO : FLP ( ) : 2SA1827 Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage (V)120 CBO CVollector-to-Emitter Voltage (V)100 CEO EVmitter-to-Base Voltage (V)6 EBO CIollector Current (A)4 C CIollector Current (Pulse) (A)8 CP BIase Current (A)0.8 B CPollector Dissipation 1W.5 C C Jjunction Temperature T 150 Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =()100V, I=10 (A) CBO CB E EImitter Cutoff Current V =()4V, I=10 (A) EBO EB C h 1V =()5V, I=*()500mA 1*00 400 FE CE C DC Current Gain h V =()5V, I=0()3A 4 FE2 CE C * : The 2SA1827/2SC4731 are classified by 500mA h as follows : Continued on next page. FE RRank S T h1000 to 2001040 to 28 200 to 40 FE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20701TS TA-3151, 3152/91098HA (KT)/D151MH (KOTO) No.38791/4 1.0 7.5 8.52SA1827/2SC4731 Continued from preceding page. Ratings Plarameter Ssymbo Condition Unit mpintxy ma (z130) MH Gfain-Bandwidth Product V =()10V, I =()500mA T CE C 1z80 MH OCutput Capacitance V=0()10V, f=1MHz (F65)4 p ob CB ()200)(V500 m CVollector-to-Emitter Saturation Voltage I =()2A, I =()0.2A CE(sat) C B 1050 4V0 m BVase-to-Emitter Saturation Voltage I =()2A, I=9()0.2A (2)0.(V)1. BE(sat) C B CVollector-to-Base Breakdown Voltage I =()10A, I=00 (V)12 (BR)CBO C E CVollector-to-Emitter Breakdown Voltage I =()1mA, R = (V)100 (BR)CEO C BE EVmitter-to-Base Breakdown Voltage I =()10A, I=60 (V) (BR)EBO E C Tturn-ON Time S0ee specified Test Circuit 1s0 n on (s800) n Sttorage Time See specified Test CIrcuit stg 9s00 n Ftall Time S0ee specified Test Circuit 5sn f Switching Time Test Circuit PW=20s I Duty Cycle1% B1 OUTPUT R B INPUT I B2 R L V R 50 25V ++ 100F 470F I =10I =--10I =2A --5V C B1 B2 (For PNP, the polarity is reversed.) I -- V I -- V C CE C CE --5 5 2SC4731 2SA1827 100mA 80mA --100mA 90mA 70mA --90mA --4 4 60mA --80mA --70mA --60mA --3 3 --50mA --2 2 --10mA 5mA --1 --5mA 1 2mA --2mA I =0 I =0 B B 0 0 0 --1 --2 --3 --4 --5 0 12 3 4 5 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V ITR04811 ITR04812 CE CE I -- V I -- V C CE C CE --2.0 2.0 2SA1827 2SC4731 --1.6 1.6 --1.2 1.2 --0.8 0.8 2mA --2mA --0.4 0.4 1mA --1mA I =0 I =0 B B 0 0 0 --10 --20 --30 --40 --50 0 10 20 30 40 50 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V CE ITR04813 CE ITR04814 No.38792/4 --20mA --3mA 4mA 3mA 10mA 5mA --5mA --4mA 6mA --6mA --30mA 7mA --9mA --7mA 8mA --8mA 20mA --40mA --10mA 30mA 50mA 40mA Collector Current, I A C Collector Current, I A C Collector Current, I A C Collector Current, I A C