Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor 2SA2125/2SC5964 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)3 A C Collector Current (Pulse) I (--)6 A CP Base Current I (--)600 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (390)380 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (24)13 pF CB V (sat)1 I =(--)1A, I =(--)50mA (--125)100 (--230)150 mV CE C B Collector to Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)100mA (--250)190 (--500)290 mV CE C B Base to Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)100mA (--)0.94 (--)1.2 V BE C B Collector to Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E V I =(--)100A, R =0 (--50)100 V (BR)CES C BE Collector to Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (30)35 ns on Storage Time t See speci ed Test Circuit. (230)300 ns stg Fall Time t (18)25 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 + + 100F 470F V = --5V V =25V BE CC I =10I = --10I =1A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2125-TD-E PCP 1,000pcs./reel Pb Free 2SA2125-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC5964-TD-E PCP 1,000pcs./reel Pb Free 2SC5964-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free No.7988-2/6