X-On Electronics has gained recognition as a prominent supplier of 2SC5994-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5994-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5994-TD-E ON Semiconductor

2SC5994-TD-E electronic component of ON Semiconductor
2SC5994-TD-E ON Semiconductor
2SC5994-TD-E Bipolar Transistors - BJT
2SC5994-TD-E  Semiconductors

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See Product Specifications
Part No. 2SC5994-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 2 A 420MHz 1.3 W Surface Mount PCP
Datasheet: 2SC5994-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.3447 ea
Line Total: USD 344.7 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8
10 : USD 0.6828
100 : USD 0.5233
500 : USD 0.4137

0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8
10 : USD 0.6828
100 : USD 0.5233
500 : USD 0.4137

0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.3447
2000 : USD 0.2999
5000 : USD 0.2792
10000 : USD 0.2689
25000 : USD 0.2586

0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 0.2215

0
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 1.3346
10 : USD 1.3093
30 : USD 1.2939
100 : USD 1.2764

0
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7307
10 : USD 0.4532
100 : USD 0.3159
250 : USD 0.284
500 : USD 0.242
1000 : USD 0.2408
2000 : USD 0.2215
5000 : USD 0.2034
10000 : USD 0.1954

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5994-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5994-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity High Speed Switching ELECTRICAL CONNECTION 2 Typical Applications 1:Base Voltage Regulators 2 : Collector 1 3:Emitter Relay Drivers Lamp Drivers 3 Electrical Equipment MARKING SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit 1 Collector to Base Voltage V 100V 2 CBO 3 V 100V CES Collector to Emitter Voltage SOT-89 / PCP-1 V 50V CEO 3 1 2 Emitter to Base Voltage V 6V EBO Collector Current I 2A C Collector Current (Pulse) I 4A CP ORDERING INFORMATION Base Current I 400mA B See detailed ordering and shipping (Note 2) 1.3 W information on page 5 of this data sheet. Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(450mm 0.8mm) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 2 2SC5994/D FJ LOT No.2SC5994 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I=0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I=0A 1 A EBO EB C h1 V =2V, I=100mA 200 560 FE CE C DC Current Gain h2 V =2V,I=1.5A 40 FE CE C Gain-Bandwidth Product f V =10V, I=300mA 420 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 9 pF CB Collector to Emitter Saturation V(sat) I =1A, I=50mA 135 300mV CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =1A, I=50mA 0.9 1.2V BE C B Collector to Base Breakdown V I =10 A, I=0A 100 V (BR)CBO C E Voltage V I =100 A, R =0 100 V Collector to Emitter Breakdown (BR)CES C BE Voltage V I =1mA, R = 50 V (BR)CEO C BE 6 Emitter to Base Breakdown Voltage V I =10 A, I =0A V (BR)EBO E C Turn-On Time t 30 ns on See specified Test 330 Storage Time t ns stg Circuit Fall Time 40 t ns f Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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