2SD1623T-TD-E ON Semiconductor

2SD1623T-TD-E electronic component of ON Semiconductor
2SD1623T-TD-E ON Semiconductor
2SD1623T-TD-E Bipolar Transistors - BJT
2SD1623T-TD-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SD1623T-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1623T-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SD1623T-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT BIP NPN 2A 50V
Datasheet: 2SD1623T-TD-E Datasheet (PDF)
Price (USD)
1017: USD 0.2557 ea
Line Total: USD 260.05 
Availability : 0
  
QtyUnit Price
1017$ 0.2557
1078$ 0.2414
1088$ 0.2391
1101$ 0.2363
1113$ 0.2336
1127$ 0.2309
1140$ 0.2281
3000$ 0.2167

Availability 1563
Ship by Fri. 07 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.693
10$ 0.537
30$ 0.4702
100$ 0.2922
500$ 0.2368
1000$ 0.2217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1623T-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1623T-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN1727F 2SB1123/2SD1623 Bipolar Transistor 2SB1123 / 2SD1623 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.5 W Collector Dissipation P C 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)50V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C h1V =(--)2V, I =(--)100mA 100* 560* FE CE C DC Current Gain h2V =(--)2V, I =(--)1.5A 40 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)50mA 150 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (22)12 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)50mA (--0.3)0.15 (--0.7)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)50mA (--)0.9 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (60)60 ns on Storage Time t See speci ed Test Circuit. (450)550 ns stg Fall Time t (30)30 ns f : The 2SB1123 / 2SD1623 are classi ed by 100mA hFE as follows : * Rank R S T U h 100 to 200 140 to 280 200 to 400 280 to 560 FE Switching Time Test Circuit PW=20 s I B1 D.C.1% OUTPUT R B INPUT V I R B2 R =50 L 50 + + 100 F 470 F --5V 25V I =10I = --10I =500mA C B1 B2 (For PNP, the polarity is reversed) Ordering Information Device Package Shipping memo 2SB1123S-TD-E PCP 1,000pcs./reel 2SB1123T-TD-E PCP 1,000pcs./reel Pb Free 2SD1623S-TD-E PCP 1,000pcs./reel 2SD1623T-TD-E PCP 1,000pcs./reel No.1727-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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