2SB1216, 2SD1816 Bipolar Transistor ()100V, ()4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High f T Good Linearity of h FE 2,4 2,4 Fast Switching Time 1 1 1:Base Typical Applications 2 : Collector 3:Emitter Suitable for Relay Drivers 3 3 4 : Collector High Speed Inverters 2SB1216 2SD1816 Converters Other General High Current Switching Applications MARKING SPECIFICATIONS ( ) : 2SB1216 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit B1216 D1816 Collector to Base Voltage V () 120 V CBO RANK LOTNo. RANK LOTNo. Collector to Emitter Voltage V () 100 V CEO Emitter to Base Voltage V () 6 V EBO Collector Current I () 4 A C Collector Current (Pulse) I () 8 A CP 1W Collector Dissipation P C Tc=25C 20 W 4 Junction Temperature 4 Tj 150 C Storage Temperature Tstg 55 to +150 C 2 Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage 1 3 the device. If any of these limits are exceeded, device functionality should not 1 be assumed, damage may occur and reliability may be affected. DPAK / TP-FA IPAK / TP 2 3 ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : March 2016 - Rev. 2 2SB1216 2SD1816/D 2SB1216, 2SD1816 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =()100V, I=0A ()1 A CBO CB E Emitter Cutoff Current I V =()4V, I=0A ()1 A EBO EB C h1 V =()5V, I =()0.5A 140* 400* FE CE C DC Current Gain h2 V =()5V,I =()3A 40 FE CE C Gain-Bandwidth Product f V =()10V, I =()0.5A (130) 180 MHz T CE C Output Capacitance Cob V =()10V, f=1MHz (65) 40 pF CB Collector to Emitter Saturation V(sat) I =()2A, I =()0.2A (200) 150 (500) 400 mV CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =()2A, I =()0.2A () 0.9 () 1.2 V BE C B Collector to Base Breakdown V I =()10 A, I=0A ()120 V (BR)CBO C E Voltage Collector to Emitter Breakdown V I =()1mA, R = ()100 V (BR)CEO C BE Voltage () 6 Emitter to Base Breakdown Voltage V I =()10 A, I =0A V (BR)EBO E C 100 Turn-On Time t ns on See specified Test (800) 900 Storage Time t ns stg Circuit Fall Time 50 t ns f Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *: The 2SB1216/2SD1816 are classified by 0.5A h as follows: FE Rank S T h 140 to 280 200 to 400 FE Fig.1 Switching Time Test Circuit www.onsemi.com 2