50A02MH-TL-E ON Semiconductor

50A02MH-TL-E electronic component of ON Semiconductor
50A02MH-TL-E ON Semiconductor
50A02MH-TL-E Bipolar Transistors - BJT
50A02MH-TL-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 50A02MH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 50A02MH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 50A02MH-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 500 mA 690MHz 600 mW Surface Mount 3-MCPH
Datasheet: 50A02MH-TL-E Datasheet (PDF)
Price (USD)
1: USD 0.575 ea
Line Total: USD 0.57 
Availability : 6312
  
Ship by Mon. 17 Nov to Wed. 19 Nov
QtyUnit Price
1$ 0.575
10$ 0.3563
100$ 0.2172
500$ 0.1507
1000$ 0.1342
3000$ 0.1133
6000$ 0.1034
9000$ 0.1001
24000$ 0.0924

Availability 8273
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 946
Multiples : 1
QtyUnit Price
946$ 0.2751
1526$ 0.1704
1564$ 0.1663
2401$ 0.1083
2428$ 0.1071
2485$ 0.1046
2548$ 0.1021
3000$ 0.0995
6000$ 0.0932


Availability 6312
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.575
10$ 0.3563
100$ 0.2172
500$ 0.1507
1000$ 0.1342
3000$ 0.1133
6000$ 0.1034
9000$ 0.1001
24000$ 0.0924


Availability 2880
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.532
10$ 0.2324
100$ 0.1848
123$ 0.1554
336$ 0.147


Availability 8273
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1598
Multiples : 1
QtyUnit Price
1598$ 0.1627
2401$ 0.1083
2461$ 0.1057
2513$ 0.1035
2565$ 0.1014
3000$ 0.0992
6000$ 0.0932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 50A02MH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 50A02MH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7488A 50A02MH Bipolar Transistor 50A02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 690 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 3.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --60 --120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --25V BE CC I =20I = --20I = --200mA C B1 B2 Ordering Information Device Package Shipping memo 50A02MH-TL-E MCPH3 3,000pcs./reel Pb Free No.7488-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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