X-On Electronics has gained recognition as a prominent supplier of 50A02MH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 50A02MH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

50A02MH-TL-E ON Semiconductor

50A02MH-TL-E electronic component of ON Semiconductor
50A02MH-TL-E ON Semiconductor
50A02MH-TL-E Bipolar Transistors - BJT
50A02MH-TL-E  Semiconductors

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See Product Specifications
Part No. 50A02MH-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 500 mA 690MHz 600 mW Surface Mount 3-MCPH
Datasheet: 50A02MH-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.55 ea
Line Total: USD 0.55 
Availability - 6325
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8273
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 969
Multiples : 1
969 : USD 0.2683
1550 : USD 0.1678
1565 : USD 0.1661
2451 : USD 0.1061
2476 : USD 0.105
2526 : USD 0.1029
2575 : USD 0.101
3000 : USD 0.0989
6000 : USD 0.0932

6325
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.55
10 : USD 0.3725
100 : USD 0.2268
500 : USD 0.154
1000 : USD 0.132
3000 : USD 0.1155
6000 : USD 0.1034
9000 : USD 0.1001
24000 : USD 0.0924

2880
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.63
10 : USD 0.42
100 : USD 0.266
123 : USD 0.1582
336 : USD 0.1498

8273
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 1565
Multiples : 1
1565 : USD 0.1661
2451 : USD 0.1061
2476 : USD 0.105
2526 : USD 0.1029
2575 : USD 0.101
3000 : USD 0.0989
6000 : USD 0.0932

5820
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1461
6000 : USD 0.1374
9000 : USD 0.1213
24000 : USD 0.1095

20370
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the 50A02MH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 50A02MH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7488A 50A02MH Bipolar Transistor 50A02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 690 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 3.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --60 --120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --25V BE CC I =20I = --20I = --200mA C B1 B2 Ordering Information Device Package Shipping memo 50A02MH-TL-E MCPH3 3,000pcs./reel Pb Free No.7488-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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