X-On Electronics has gained recognition as a prominent supplier of 50A02MH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 50A02MH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

50A02MH-TL-E ON Semiconductor

50A02MH-TL-E electronic component of ON Semiconductor
50A02MH-TL-E ON Semiconductor
50A02MH-TL-E Bipolar Transistors - BJT
50A02MH-TL-E  Semiconductors

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See Product Specifications
Part No. 50A02MH-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 500 mA 690MHz 600 mW Surface Mount 3-MCPH
Datasheet: 50A02MH-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1266 ea
Line Total: USD 379.8 
Availability - 5820
Ship by Thu. 22 May to Wed. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8468
Ship by Thu. 22 May to Wed. 28 May
MOQ : 969
Multiples : 1
969 : USD 0.2683
1425 : USD 0.1825
1439 : USD 0.1807
2228 : USD 0.1167
2250 : USD 0.1155
2345 : USD 0.1109
2448 : USD 0.1062
3000 : USD 0.1017
6000 : USD 0.0932

2895
Ship by Tue. 20 May to Thu. 22 May
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.4032
100 : USD 0.2548
123 : USD 0.1526
336 : USD 0.1442

5820
Ship by Thu. 22 May to Wed. 28 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1266
6000 : USD 0.1185
9000 : USD 0.1048
24000 : USD 0.0925

8468
Ship by Thu. 22 May to Wed. 28 May
MOQ : 969
Multiples : 1
969 : USD 0.2683

34920
Ship by Thu. 22 May to Wed. 28 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the 50A02MH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 50A02MH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7488A 50A02MH Bipolar Transistor 50A02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 690 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 3.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --60 --120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --25V BE CC I =20I = --20I = --200mA C B1 B2 Ordering Information Device Package Shipping memo 50A02MH-TL-E MCPH3 3,000pcs./reel Pb Free No.7488-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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