AML2002 ON Semiconductor

AML2002 electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AML2002 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. AML2002 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. AML2002
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 200V 0.7A 3-Pin TO-126ML Bag
Datasheet: AML2002 Datasheet (PDF)
Price (USD)
1400: USD 0.4583 ea
Line Total: USD 641.62 
Availability : 0
  
QtyUnit Price
1400$ 0.4583

Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 1400
Multiples : 200
QtyUnit Price
1400$ 0.4583

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Emitter-Base Voltage
Dc Current Gain
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current Dc
Rad Hardened
Frequency
Mounting
Pin Count
Category
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AML2002 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AML2002 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : ENA1837A AML2002 Bipolar Transistor AML2002 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =100V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =100mA 200 560 FE CE C Gain-Bandwidth Product f V =10V, I =100mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 9 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =0.35A, I =35mA 125 220 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =0.35A, I =35mA 0.82 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 220 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 200 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 8 V (BR)EBO E C Turn-On Time t 50 ns on Storage Time t See speci ed Test Circuit. 2 s stg Fall Time t 70 ns f Switching Time Test Circuit I B1 PW=50s D.C. 1% OUTPUT I B2 INPUT R B R L 50 + 820F V =100V CC I =10I = --10I =0.3A C B1 B2 Ordering Information Device Package Shipping memo AML2002 TO-126ML 200pcs./bag Pb Free I -- V I -- V C CE C CE 1.0 0.20 0.9 0.18 0.8 0.16 0.7 0.14 0.6 0.12 0.5 0.10 0.4 0.08 0.3 0.06 0.2 0.04 0.1 0.02 I =0mA I =0 A B B 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0011 2 3 4567890 Collector-to-Emitter Voltage, V -- V IT15964 Collector-to-Emitter Voltage, V -- V IT15965 CE CE No. A1837-2/7 10mA 2mA 200A 100 A 300 A 500A 400A 80mA 60mA 50mA 40mA 30mA 20mA 600 A 8mA 6mA 4mA 100mA 700 A 900A 800A 1mA Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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