BC237B Amplifier Transistors NPN Silicon Features BC237B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 2.0 mA, I = 0) 45 C B EmitterBase Breakdown Voltage V V (BR)EBO (I = 100 A, I = 0) 6.0 E C Collector Cutoff Current I CES (V = 50 V, V = 0) 0.2 15 nA CE BE (V = 50 V, V = 0) T = 125C 0.2 4.0 A CE BE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE 200 290 460 (I = 2.0 mA, V = 5.0 V) C CE (I = 100 mA, V = 5.0 V) 180 C CE CollectorEmitter On Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.07 0.2 C B (I = 100 mA, I = 5.0 mA) 0.2 0.6 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.6 0.83 C B (I = 100 mA, I = 5.0 mA) 1.05 C B BaseEmitter On Voltage V V BE(on) (I = 100 A, V = 5.0 V) 0.5 C CE (I = 2.0 mA, V = 5.0 V) 0.55 0.62 0.7 C CE (I = 100 mA, V = 5.0 V) 0.83 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 0.5 mA, V = 3.0 V, f = 100 MHz) 100 C CE (I = 10 mA, V = 5.0 V, f = 100 MHz) 150 200 C CE CollectorBase Capacitance C 4.5 pF obo (V = 10 V, I = 0, f = 1.0 MHz) CB C EmitterBase Capacitance C 8.0 pF ibo (V = 0.5 V, I = 0, f = 1.0 MHz) EB C Noise Figure NF dB (I = 0.2 mA, V = 5.0 V, R = 2.0 k , f = 1.0 kHz, f = 200 Hz) 2.0 10 C CE S